RT Journal Article
T1 Efficiency analysis of a modular H-bridge based on SiC MOSFET
A1 Pacher Vega, Julio César
A1 Rodas Benítez, Jorge Esteban
A1 Gregor Recalde, Raúl Igmar
A1 Rivera, Marco
A1 Renault, Alfredo
A1 Comparatore Franco, Leonardo David
A2 Universidad Nacional de Asunción - Facultad de Ingeniería
A2 Universidad de Talca - Department of Electrical Engineering (CL)
AB Several new high-performance power semiconductors have appeared during the last decade, being the silicon carbide (SiC) MOSFETs the most promising to be commercialised as an alternative of Si IGBT. This paper presents the performance analysis of a controller for a full H-bridge based on SiC MOSFET technology used for high frequency and medium voltage applications. The switching performance of a modular H-bridge is analysed and the efficiency/losses and temperature dissipation are experimentally measured in order to help engineers to design and develop circuits using this power semiconductor. A comparison between SiC MOSFET and Si MOSFET is also presented.
YR 2018
FD 2018
LK http://hdl.handle.net/20.500.14066/3401
UL http://hdl.handle.net/20.500.14066/3401
LA eng
NO CONACYT – Consejo Nacional de Ciencia y Tecnología
DS MINDS@UW
RD 27-dic-2024