TY  - JOUR 
AU  - Pacher Vega, Julio César
AU  - Rodas Benítez, Jorge Esteban
AU  - Gregor Recalde, Raúl Igmar
AU  - Rivera, Marco
AU  - Renault, Alfredo
AU  - Comparatore Franco, Leonardo David
AU  - Universidad Nacional de Asunción - Facultad de Ingeniería
AU  - Universidad de Talca - Department of Electrical Engineering (CL)
PY  - 2018
UR  - http://hdl.handle.net/20.500.14066/3401
AB  - Several new high-performance power semiconductors have appeared during the last decade, being the silicon carbide (SiC) MOSFETs the most promising to be commercialised as an alternative of Si IGBT. This paper presents the performance analysis of a...
LA  - eng
KW  - 5 Energía
KW  - MODULAR H-BRIDGE
KW  - SIC-MOSFET
KW  - EFFICIENCY ANALYSIS
TI  - Efficiency analysis of a modular H-bridge based on SiC MOSFET
DO  - https://doi.org/10.1080/21681724.2018.1426111
T2  - International Journal of Electronics Letters
ER  -