TY - JOUR AU - Pacher Vega, Julio Cesar AU - Rodas Benítez, Jorge Esteban AU - Gregor Recalde, Raul Igmar AU - Rivera, Marco AU - Renault, Alfredo AU - Comparatore Franco, Leonardo David AU - Universidad Nacional de Asunción - Facultad de Ingeniería AU - Universidad de Talca - Department of Electrical Engineering (CL) PY - 2018 UR - http://hdl.handle.net/20.500.14066/3401 AB - Several new high-performance power semiconductors have appeared during the last decade, being the silicon carbide (SiC) MOSFETs the most promising to be commercialised as an alternative of Si IGBT. This paper presents the performance analysis of a... LA - eng KW - 5 Energía KW - MODULAR H-BRIDGE KW - SIC-MOSFET KW - EFFICIENCY ANALYSIS TI - Efficiency analysis of a modular H-bridge based on SiC MOSFET DO - https://doi.org/10.1080/21681724.2018.1426111 T2 - International Journal of Electronics Letters ER -