Part I - Advancements in power converter technologies : a focus on SiC-MOSFET-based voltage source converters

Abstract

Power converter technologies have become vital in various applications due to their efficient management of electrical energy. With the growing prominence of renewable energy sources such as solar and wind, the high penetration of power electronic converters has been justified. However, ensuring power quality has emerged as a significant challenge for grid-connected power converters. The divergence from the ideal sinusoidal waveform in terms of magnitude and frequency impacts both grid-side currents and voltages. Several studies have proposed solutions to address power quality issues at the load side. The advancement of power converters has been fueled by the development of high-performance microprocessors and the emergence of high-speed switching devices, such as SiC-MOSFETs. This paper focuses on the design of voltage source converters, particularly those based on SiC-MOSFET semiconductor devices. The article presents the design of H-Bridge cells, discusses two-level voltage source converters based on cascade H-Bridge cells in a parallel configuration with experimental fault analysis, addresses the seven-level voltage source converter topology, and explores the design and experimental results of the matrix converter. The findings underscore the importance of considering the entire converter design for improved performance at high switching frequencies. The article concludes by summarizing the main outcomes and implications of this research.