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dc.contributor.authorPacher Vega, Julio César 
dc.contributor.authorRodas Benítez, Jorge Esteban 
dc.contributor.authorGregor Recalde, Raúl Igmar 
dc.contributor.authorRivera, Marco
dc.contributor.authorRenault, Alfredo 
dc.contributor.authorComparatore Franco, Leonardo David 
dc.contributor.otherUniversidad Nacional de Asunción - Facultad de Ingenieríaes
dc.contributor.otherUniversidad de Talca - Department of Electrical Engineering (CL)es
dc.date.accessioned2022-04-24T17:17:03Z
dc.date.available2022-04-24T17:17:03Z
dc.date.issued2018
dc.identifier.urihttp://hdl.handle.net/20.500.14066/3401
dc.description.abstractSeveral new high-performance power semiconductors have appeared during the last decade, being the silicon carbide (SiC) MOSFETs the most promising to be commercialised as an alternative of Si IGBT. This paper presents the performance analysis of a controller for a full H-bridge based on SiC MOSFET technology used for high frequency and medium voltage applications. The switching performance of a modular H-bridge is analysed and the efficiency/losses and temperature dissipation are experimentally measured in order to help engineers to design and develop circuits using this power semiconductor. A comparison between SiC MOSFET and Si MOSFET is also presented.es
dc.description.sponsorshipCONACYT – Consejo Nacional de Ciencia y Tecnologíaes
dc.language.isoenges
dc.subject.classification5 Energíaes
dc.subject.otherMODULAR H-BRIDGEes
dc.subject.otherSIC-MOSFETes
dc.subject.otherEFFICIENCY ANALYSISes
dc.titleEfficiency analysis of a modular H-bridge based on SiC MOSFETes
dc.typeresearch articlees
dc.identifier.doihttps://doi.org/10.1080/21681724.2018.1426111es
dc.description.fundingtextPROCIENCIAes
dc.journal.titleInternational Journal of Electronics Letterses
dc.relation.projectCONACYT14-INV-096es
dc.rights.accessRightsopen accesses
dc.rights.copyright© 2018 Informa UK Limited, trading as Taylor & Francis Groupes
dc.subject.ocdeINGENIERIAes


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