Efficiency analysis of a modular H-bridge based on SiC MOSFET

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URI
http://hdl.handle.net/20.500.14066/3401
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Author(s)
Pacher Vega, Julio CesarCONACYT Authority; Rodas Benítez, Jorge EstebanCONACYT Authority; Gregor, Raúl IgmarCONACYT Authority; Rivera, Marco; Renault, AlfredoCONACYT Authority; Comparatore Franco, Leonardo DavidCONACYT Authority
Date of publishing
2018
Type of publication
research article
Subject(s)
Abstract
Several new high-performance power semiconductors have appeared during the last decade, being the silicon carbide (SiC) MOSFETs the most promising to be commercialised as an alternative of Si IGBT. This paper presents the performance analysis of a controller for a full H-bridge based on SiC MOSFET technology used for high frequency and medium voltage applications. The switching performance of a modular H-bridge is analysed and the efficiency/losses and temperature dissipation are experimentally measured in order to help engineers to design and develop circuits using this power semiconductor. A comparison between SiC MOSFET and Si MOSFET is also presented.
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